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| Composite Transistors XN01504 (XN1504) Silicon NPN epitaxial planar type For amplification of low-frequency output 3 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 4 5 Unit: mm 0.16+0.10 -0.06 1.50+0.25 -0.05 2.8+0.2 -0.3 Basic Part Number * 2SD1915F x 2 10 1.1+0.2 -0.1 (0.65) * Two elements incorporated into one package (Emitter-coupled transistors) * Reduction of the mounting area and assembly cost by one half 2 0.30+0.10 -0.05 1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 50 20 25 300 500 300 150 -55 to +150 Unit V V V mA mA mW C C Tr2 1: Collector (Tr1) 2: Collector (Tr2) 3: Base (Tr2) EIAJ: SC-74A 0 to 0.1 Absolute Maximum Ratings Ta = 25C 4: Emitter 5: Base (Tr1) Mini5-G1 Package Marking Symbol: 5S Internal Connection 3 4 5 1.1+0.3 -0.1 Tr1 Electrical Characteristics Ta = 25C 3C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE ratio *1 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistanse *2 Symbol VCEO VBE ICBO IEBO hFE hFE(Small /Large) 2 1 Conditions IC = 1 mA, IB = 0 VCE = 2 V, IC = 4 mA VCB = 50 V, IE = 0 VEB = 25 V, IC = 0 VCE = 2 V, IC = 4 mA VCE = 2 V, IC = 4 mA IC = 30 mA, IB = 3 mA VCB = 6 V, IE = -4 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Min 20 Typ Max Unit V 0.6 0.1 0.1 500 0.50 0.99 0.1 80 7 1.0 1 k V A A V MHz pF 2 500 VCE(sat) fT Cob Ron Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Ratio between 2 elements *2: Ron start resistance test circuit IB = 5 mA VB VV VB x 1 000 () VA - VB f = 1 kHz V = 0.3 V VA Ron = Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00029BED 0.40.2 Features 5 1 XN01504 PT Ta 500 IC VCE 24 Ta = 25C 120 IC VBE VCE = 2 V 25C Ta = 75C Total power dissipation PT (mW) 400 20 100 Collector current IC (mA) Collector current IC (mA) IB = 10 A 16 8 A 80 300 12 6 A 4 A 60 -25C 200 8 40 100 4 2 A 20 0 0 40 80 120 160 0 0 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 IC / IB = 10 2 000 hFE IC VCE = 2 V 200 fT I E VCB = 6 V Ta = 25C Forward current transfer ratio hFE Transition frequency fT (MHz) 1 600 25C -25C 800 1 Ta = 75C 160 1 200 120 0.1 Ta = 75C 25C 0.01 -25C 80 400 40 0.001 0.1 1 10 100 0 0.1 1 10 100 0 - 0.1 -1 -10 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 20 f = 1 MHz Ta = 25C 16 12 8 4 0 1 10 100 Collector-base voltage VCB (V) 2 SJJ00029BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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